IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXXH75N60B3D1

IXXH75N60B3D1

IXXH75N60B3D1 Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXXH75N60B3D1
MG300Q1US11

MG300Q1US11

MG300Q1US11 IGBT Module In-stock / Toshiba: 1200V 300A. Low saturation voltage. 90-day warranty, industrial VFD & UPS. Global fast shipping. Get quote.
2SD2657TL

2SD2657TL

2SD2657TL Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN; 2SD2657TL
T70RIA80

T70RIA80

T70RIA80 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, ROHS COMPLIANT, D-55, T-MODULE-3; T70RIA80
DTC124ECA-TP

DTC124ECA-TP

DTC124ECA-TP Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; DTC124ECA-TP
SW24DXC20C

SW24DXC20C

SW24DXC20C DIODE 4310 A, 2400 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW24DXC20C
MUN2241T1

MUN2241T1

MUN2241T1 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN; MUN2241T1
IRG4PH20KDPBF

IRG4PH20KDPBF

IRG4PH20KDPBF Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRG4PH20KDPBF
VI-J1F-CX

VI-J1F-CX

VI-J1F-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J1F-CX
VI-BTV-IW

VI-BTV-IW

VI-BTV-IW DC-DC Booster Module, 100W; VI-BTV-IW