IXGX120N120A3 Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXGX120N120A3
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.