IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MDD44-08N1

MDD44-08N1

MDD44-08N1 Rectifier Diode, 59A, 800V V(RRM),; MDD44-08N1
PDT3012

PDT3012

PDT3012 Silicon Controlled Rectifier, 47A I(T)RMS, 30000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, MODULE-7; PDT3012
DIM600DDM12-E

DIM600DDM12-E

DIM600DDM12-E Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN; DIM600DDM12-E
TM200PZ-H

TM200PZ-H

TM200PZ-H Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; TM200PZ-H
TIP41A-BP

TIP41A-BP

TIP41A-BP Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN; TIP41A-BP
GBPC25005

GBPC25005

GBPC25005 25 A Bridge Rectifer, 50-BLKBG; GBPC25005
2SB0953AQ

2SB0953AQ

2SB0953AQ Power Bipolar Transistor, 7A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN; 2SB0953AQ
PH300F48-2

PH300F48-2

PH300F48-2 DC-DC Regulated Power Supply Module, 1 Output, 120W,; PH300F48-2
S6010FS21

S6010FS21

S6010FS21 Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-202, TO-202, 3 PIN; S6010FS21
82-5022

82-5022

82-5022 General Purpose Inductor, 22000uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT; 82-5022