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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VBO130-18NO7

VBO130-18NO7

VBO130-18NO7 Bridge Rectifier Diode, 1 Phase, 115A, 1800V V(RRM), Silicon, ROHS COMPLIANT, MODULE-4; VBO130-18NO7
V375B24C300AN

V375B24C300AN

V375B24C300AN DC-DC Regulated Power Supply Module, 1 Output, 300W, Hybrid; V375B24C300AN
ULQ2004AD

ULQ2004AD

ULQ2004AD High-Voltage, High-Current Darlington Transistor Array 16-SOIC -40 to 85; ULQ2004AD
CD240602

CD240602

CD240602 Rectifier Diode, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon,; CD240602
CM30TF-12E

CM30TF-12E

CM30TF-12E IGBT Module In-stock / Mitsubishi: 600V 30A 6-pack. Low VCE(sat), 2500V isolation. 90-day warranty, motor drive. Global fast shipping. Request pricing now.
BSM300GA120DLC

BSM300GA120DLC

BSM300GA120DLC Insulated Gate Bipolar Transistor, 570A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; BSM300GA120DLC
VI-B64-CW

VI-B64-CW

VI-B64-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B64-CW
VI-J24-CY

VI-J24-CY

VI-J24-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J24-CY
VI-B5Y-CV

VI-B5Y-CV

VI-B5Y-CV DC-DC Booster Module, 1 Output, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B5Y-CV
IXGH30N120C3H1

IXGH30N120C3H1

IXGH30N120C3H1 Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXGH30N120C3H1