IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRG4PH20KPBF

IRG4PH20KPBF

IRG4PH20KPBF Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRG4PH20KPBF
DTC143ZEBTL

DTC143ZEBTL

DTC143ZEBTL Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-89, 3 PIN; DTC143ZEBTL
VI-23B-IU

VI-23B-IU

VI-23B-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-23B-IU
TIC236M-S

TIC236M-S

TIC236M-S 4 Quadrant Logic Level TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB, TO-220, 3 PIN; TIC236M-S
MJ11030

MJ11030

MJ11030 50A, 90V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 197A-05, TO-3, 2 PIN; MJ11030
W104CFC200

W104CFC200

W104CFC200 Rectifier Diode, 1 Phase, 1 Element, 10450A, 2000V V(RRM), Silicon,; W104CFC200
CM150RL-24NF

CM150RL-24NF

CM150RL-24NF Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-20; CM150RL-24NF
ZDT758TC

ZDT758TC

ZDT758TC Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; ZDT758TC
C430DX500

C430DX500

C430DX500 Silicon Controlled Rectifier, 1250A I(T)RMS, 800000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, POW-R-DISC-4; C430DX500
Q8025LH5

Q8025LH5

Q8025LH5 Alternistor TRIAC, 800V V(DRM), 25A I(T)RMS,; Q8025LH5