IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRF3709ZPBF

IRF3709ZPBF

IRF3709ZPBF Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3; IRF3709ZPBF
5SNA1800E170100

5SNA1800E170100

5SNA1800E170100 Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel, MODULE-9; 5SNA1800E170100
FDC15-48S140

FDC15-48S140

FDC15-48S140 Analog Circuit,; FDC15-48S140
BC327-040

BC327-040

BC327-040 800mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN; BC327-040
BAV756DW-7

BAV756DW-7

BAV756DW-7 Rectifier Diode, 4 Element, 0.15A, 75V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6; BAV756DW-7
B664-2T

B664-2T

B664-2T Silicon Controlled Rectifier, 1200V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-5; B664-2T
DMG963HE0R

DMG963HE0R

DMG963HE0R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI5-F4-B, SC-107BB, 5 PIN; DMG963HE0R
SW20PHN380

SW20PHN380

SW20PHN380 DIODE 370 A, 2000 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW20PHN380
170M3517

170M3517

170M3517 Electric Fuse, 315A, 700VAC, 200000A (IR), Inline/holder,; 170M3517
MBM200BS6

MBM200BS6

MBM200BS6 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE; MBM200BS6