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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FZT491TC

FZT491TC

FZT491TC Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin; FZT491TC
CD431440B

CD431440B

CD431440B Silicon Controlled Rectifier, 63A I(T)RMS, 40000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, POW-R-BLOK-7; CD431440B
T507024064AQ

T507024064AQ

T507024064AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507024064AQ
GBJ2006

GBJ2006

GBJ2006 Bridge Rectifier Diode, 1 Phase, 20A, 600V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN; GBJ2006
MJ50BK100

MJ50BK100

MJ50BK100 Power Bipolar Transistor, 50A I(C), 1-Element; MJ50BK100
MEK95-06DA

MEK95-06DA

MEK95-06DA Rectifier Diode, 1 Phase, 2 Element, 95A, 600V V(RRM), Silicon, TO-240AA, MODULE-3; MEK95-06DA
UF28100H

UF28100H

UF28100H RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4; UF28100H
VI-JWM-MZ

VI-JWM-MZ

VI-JWM-MZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JWM-MZ
L0109NEAP

L0109NEAP

L0109NEAP 4 Quadrant Logic Level TRIAC, 800V V(DRM), 1A I(T)RMS, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; L0109NEAP
QS8M51TR

QS8M51TR

QS8M51TR Power Field-Effect Transistor, 2A I(D), 100V, 0.355ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN; QS8M51TR