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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-25Y-EV

VI-25Y-EV

VI-25Y-EV DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-25Y-EV
AON7611

AON7611

AON7611 Transistor; AON7611
DSA70C200HB

DSA70C200HB

DSA70C200HB Rectifier Diode, Schottky, 35A, 200V, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3
MRF6S9060NR1

MRF6S9060NR1

MRF6S9060NR1 RF Power Field-Effect Transistor; MRF6S9060NR1
APTGT75X120RTP3

APTGT75X120RTP3

APTGT75X120RTP3 Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; APTGT75X120RTP3
ND431225

ND431225

ND431225 Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, POW-R-BLOK-7; ND431225
EMB4T2R

EMB4T2R

EMB4T2R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, EMT6, 6 PIN; EMB4T2R
SSTA13T116

SSTA13T116

SSTA13T116 Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,; SSTA13T116
503303B

503303B

503303B Regulator; 503303B
VGO55-12IO7

VGO55-12IO7

VGO55-12IO7 Silicon Controlled Rectifier, 41A I(T)RMS, 41000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element,; VGO55-12IO7