IGBT Modules - Transistors from Mitsubishi & Fuji - Page 68

MWI150-06A8

MWI150-06A8 Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel, SIXPACK-33; MWI150-06A8

IXYS Qty: 722pcs

CR2LS-20

CR2LS-20 Electric Fuse, Super Fast Blow, 20A, 250VAC, 100000A (IR), Inline/holder,; CR2LS-20

FUJI Qty: 103pcs

S2015L

S2015L Silicon Controlled Rectifier, 15A I(T)RMS, 15000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN; S2015L

Littelfuse Inc Qty: 2070pcs

S402ESAP

S402ESAP Silicon Controlled Rectifier, 1.5A I(T)RMS, 950mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; S402ESAP

Littelfuse Inc Qty: 2163pcs

TZ430N20

TZ430N20 Silicon Controlled Rectifier, 669000mA I(T), 2000V V(RRM); TZ430N20

EUPEC Qty: 100pcs

MRF8P23080HSR3

MRF8P23080HSR3 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRF8P23080HSR3

Freescale Semiconductor Qty: 1610pcs

MD2310FX

MD2310FX High voltage npn power transistor for standard definition crt display; MD2310FX

STMicroelectronics Qty: 656pcs

2N6487G

2N6487G 15 A, 60 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE; 2N6487G

ON　 Qty: 4118pcs

FP10R12NT3

FP10R12NT3 IGBT Modules N-CH 1.2KV 18A; 10A/1200V/PIM

Infineon Qty: 463pcs Price: US$55

S2006V

S2006V Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-251, VPAK-3; S2006V

Littelfuse Inc Qty: 183pcs