Content last revised on March 22, 2024
FP10R12NT3
Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Continuous Collector Current at 25 C: 18 A
Maximum Operating Temperature: + 125 C
Package / Case: EUPEC
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Stud
Factory Pack Quantity: 16
IGBT Modules N-CH 1.2KV 18A; 10A/1200V/PIM
