IXTT02N450HV Power Field-Effect Transistor, 0.2A I(D), 4500V, 625ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268HV, 2 PIN; IXTT02N450HV
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.