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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N2484UB

2N2484UB

2N2484UB Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3; 2N2484UB
CM521213

CM521213

CM521213 Silicon Controlled Rectifier, 205A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, POW-R-BLOK-6; CM521213
BC637G

BC637G

BC637G High Current NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; BC637G
CR2LS-100

CR2LS-100

CR2LS-100 Electric Fuse, Super Fast Blow, 100A, 250VAC, 100000A (IR), Inline/holder,; CR2LS-100
CM75RX-24S

CM75RX-24S

In-stock CM75RX-24S IGBT Module by Mitsubishi: 1200V, 75A dual configuration with low VCE(sat). 90-day warranty, ideal for AC motor control. Global fast shipping. Check stock online.
MG300Q1UK1

MG300Q1UK1

MG300Q1UK1 TOSHIBA Power Bipolar Transistor, 300A 1200V
CD471240

CD471240

CD471240 Silicon Controlled Rectifier, 63A I(T)RMS, 40000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, POW-R-BLOK-5; CD471240
VI-B3F-EU

VI-B3F-EU

VI-B3F-EU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B3F-EU
DRA5115G0L

DRA5115G0L

DRA5115G0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; DRA5115G0L
DF20AA120

DF20AA120

DF20AA120 Bridge Rectifier Diode, 20A, 1200V V(RRM),; DF20AA120