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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DXTA92-13

DXTA92-13

DXTA92-13 Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, GREEEN, PLASTIC, SOT89-3L, 4 PIN; DXTA92-13
FMM300-0055P

FMM300-0055P

FMM300-0055P Power Field-Effect Transistor, 300A I(D), 55V, 0.0036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5; FMM300-0055P
IMH4AT110

IMH4AT110

IMH4AT110 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SC-74, 6 PIN; IMH4AT110
BS36UG25V125

BS36UG25V125

BS36UG25V125 Electric Fuse, 125A, 250VAC, 100000A (IR), Inline/holder,; BS36UG25V125
FST10040

FST10040

FST10040 40V 100A Silicon Schottky Rectifier in TO-249AB Package; FST10040
HTZ150C7K

HTZ150C7K

HTZ150C7K Rectifier Diode, 1 Phase, 2 Element, 3A, 7200V V(RRM), Silicon, ZC, 3 PIN; HTZ150C7K
S6008VTP

S6008VTP

S6008VTP Silicon Controlled Rectifier, 8A I(T)RMS, 5100mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-251AA, ROHS COMPLIANT, PLASTIC, V/IPAK-3; S6008VTP
DDB6U84N16RR

DDB6U84N16RR

DDB6U84N16RR Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; DDB6U84N16RR
2N4920G

2N4920G

2N4920G 1.0 A, 80 V PNP Bipolar Power Transistor, TO-225, 500-BLKBX; 2N4920G
2N5415

2N5415

2N5415 Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD; 2N5415