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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

A70P250-4TI

A70P250-4TI

A70P250-4TI Electric Fuse, Very Fast Blow, 250A, 700VAC, 650VDC, 100000A (IR), Inline/holder,; A70P250-4TI
ST333S08PFL0

ST333S08PFL0

ST333S08PFL0 Silicon Controlled Rectifier, 518A I(T)RMS, 330000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN; ST333S08PFL0
2SC6094-TD-E

2SC6094-TD-E

2SC6094-TD-E Bipolar Transistor, 60V, 3A, Low VCE(sat), NPN Single PCP, SOT-89 / PCP-1, 1000-REEL; 2SC6094-TD-E
MRFE6S8046NR1

MRFE6S8046NR1

MRFE6S8046NR1 RF POWER, FET; MRFE6S8046NR1
2MBI150J-120

2MBI150J-120

2MBI150J-120 IGBT Module In-stock / Fuji Electric: 1200V 150A. High-speed switching, low thermal resistance. 90-day warranty, VFD/UPS. Request pricing now.
FNA41560B2

FNA41560B2

FNA41560B2 Motion SPM® 45 Series Longer Pins, 72-TUBE; FNA41560B2
4R3TI30Y-080

4R3TI30Y-080

4R3TI30Y-080 FUJI THYRISTOR MODULE 800V / 30A DIODE &
BC490AG

BC490AG

BC490AG 1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, LEAD FREE, CASE 29-11, TO-92, TO-226, 3 PIN; BC490AG
TM55EZ-2H

TM55EZ-2H

TM55EZ-2H Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element,; TM55EZ-2H
DCX114YK-7-F

DCX114YK-7-F

DCX114YK-7-F Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PLASTIC, SC-74R, 6 PIN; DCX114YK-7-F