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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VKO55-14IO7

VKO55-14IO7

VKO55-14IO7 Silicon Controlled Rectifier, 41A I(T)RMS, 41000mA I(T), 1400V V(DRM), 1400V V(RRM), 4 Element; VKO55-14IO7
2SD1664T100P

2SD1664T100P

2SD1664T100P Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, SC-62, 3 PIN; 2SD1664T100P
APTLGL325A1208G

APTLGL325A1208G

APTLGL325A1208G Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES; APTLGL325A1208G
S6065KTP

S6065KTP

S6065KTP Silicon Controlled Rectifier, 65A I(T)RMS, 41000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-218AC, ROHS COMPLIANT, PLASTIC PACKAGE-3; S6065KTP
STD03P

STD03P

STD03P Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, MT-105, TO-3P, 5 PIN; STD03P
BLF8G22LS-240U

BLF8G22LS-240U

BLF8G22LS-240U RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLF8G22LS-240U
A70P225-4

A70P225-4

A70P225-4 Electric Fuse, Very Fast Blow, 225A, 700VAC, 650VDC, 100000A (IR), Inline/holder,; A70P225-4
APTGF75SK60D1G

APTGF75SK60D1G

APTGF75SK60D1G Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7; APTGF75SK60D1G
APTGL90DH120T3G

APTGL90DH120T3G

APTGL90DH120T3G Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES,; APTGL90DH120T3G
2N5461G

2N5461G

2N5461G Small Signal JFET P-Channel, TO-92 (TO-226) 5.33mm Body Height, 1000-BLKBX; 2N5461G