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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

RB481Y-40T2R

RB481Y-40T2R

RB481Y-40T2R Rectifier Diode, Schottky, 2 Element, 0.1A, 40V V(RRM), Silicon, SC-107A, 4 PIN; RB481Y-40T2R
ZXTP2012ASTOA

ZXTP2012ASTOA

ZXTP2012ASTOA Small Signal Bipolar Transistor, 3.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, E-LINE, 3 PIN; ZXTP2012ASTOA
MRF6S21190HSR3

MRF6S21190HSR3

MRF6S21190HSR3 RF Power Field-Effect Transistor; MRF6S21190HSR3
VI-23B-CX

VI-23B-CX

VI-23B-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-23B-CX
Q6010L555

Q6010L555

Q6010L555 TRIAC, 600V V(DRM), 10A I(T)RMS, TO-220AB, TO-220, 3 PIN; Q6010L555
DIM400BSS12-A

DIM400BSS12-A

DIM400BSS12-A Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, B, 5 PIN; DIM400BSS12-A
FDP52N20

FDP52N20

FDP52N20 Power MOSFET, N-Channel, UniFETTM, 200V, 52A, 49mΩ, TO-220, 1000-TUBE; FDP52N20
DLA100B1200LB-TRR

DLA100B1200LB-TRR

DLA100B1200LB-TRR Bridge Rectifier Diode, 124A, 1200V V(RRM),; DLA100B1200LB-TRR
IXFH70N20Q3

IXFH70N20Q3

IXFH70N20Q3 Power Field-Effect Transistor, 70A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3; IXFH70N20Q3
92MT100KB

92MT100KB

92MT100KB Silicon Controlled Rectifier, 1000 V, SCR; 92MT100KB