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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

LMB6S-TP

LMB6S-TP

LMB6S-TP Bridge Rectifier Diode, 1 Phase, 0.8A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, LMBS-1, 4 PIN; LMB6S-TP
2SC3975

2SC3975

2SC3975 Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-92,TOP-3F-A1, 3 PIN; 2SC3975
GBJ1506-BP

GBJ1506-BP

GBJ1506-BP Bridge Rectifier Diode, 1 Phase, 15A, 600V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN; GBJ1506-BP
MBR1535CTG

MBR1535CTG

MBR1535CTG Schottky Power Rectifier, Switch-mode, 15 A, 35 V, TO-220 3 LEAD STANDARD, 50-TUBE; MBR1535CTG
AO4629

AO4629

AO4629 Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8; AO4629
VI-B6W-CV

VI-B6W-CV

VI-B6W-CV DC-DC Booster Module, 150W; VI-B6W-CV
2SB1260T100Q

2SB1260T100Q

2SB1260T100Q Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-62, 3 PIN; 2SB1260T100Q
2SC2988

2SC2988

2SC2988 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-126; 2SC2988
APTGF90H60TG

APTGF90H60TG

APTGF90H60TG Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-14; APTGF90H60TG
VI-BNR-EU

VI-BNR-EU

VI-BNR-EU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-BNR-EU