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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

P2N2222AG

P2N2222AG

P2N2222AG NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; P2N2222AG
T1620T-8I

T1620T-8I

T1620T-8I Snubberless™ 16 A Triac; T1620T-8I
T9G0041203DH

T9G0041203DH

T9G0041203DH Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, T9G, 3 PIN; T9G0041203DH
APTGT300DA120D3G

APTGT300DA120D3G

APTGT300DA120D3G Insulated Gate Bipolar Transistor, 440A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT300DA120D3G
VI-2WY-EU

VI-2WY-EU

VI-2WY-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid,; VI-2WY-EU
CDBV3-00340C-G

CDBV3-00340C-G

CDBV3-00340C-G Rectifier Diode, Schottky, 0.03A, 40V V(RRM),; CDBV3-00340C-G
VUO25-18NO8

VUO25-18NO8

VUO25-18NO8 Bridge Rectifier Diode, 3 Phase, 25A, 1800V V(RRM), Silicon, ROHS COMPLIANT, MODULE-5; VUO25-18NO8
MJW0302AG

MJW0302AG

MJW0302AG 150W Audio Transistor, TO-247, 30-TUBE; MJW0302AG
IRFP250PBF

IRFP250PBF

IRFP250PBF Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3; IRFP250PBF
VI-23P-EV

VI-23P-EV

VI-23P-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-23P-EV