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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

S8025NTP

S8025NTP

S8025NTP Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-263AA, ROHS COMPLIANT, PLASTIC, D2PAK-3; S8025NTP
NJVNJD2873T4G

NJVNJD2873T4G

NJVNJD2873T4G 2.0 A, 50 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NJVNJD2873T4G
VI-J1M-EX

VI-J1M-EX

VI-J1M-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J1M-EX
2SK3018T106

2SK3018T106

2SK3018T106 Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN; 2SK3018T106
VBO19-08NO7

VBO19-08NO7

VBO19-08NO7 Bridge Rectifier Diode, 1 Phase, 21A, 800V V(RRM), Silicon,; VBO19-08NO7
VS-30CTQ050PBF

VS-30CTQ050PBF

VS-30CTQ050PBF DIODE RECTIFIER DIODE, Rectifier Diode; VS-30CTQ050PBF
2SC4027T-E

2SC4027T-E

2SC4027T-E Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat) (PNP)NPN Single TP/TP-FA, IPAK / TP, 500-BLKBG; 2SC4027T-E
PT5016

PT5016

PT5016 Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN; PT5016
MIXA10W1200TML

MIXA10W1200TML

MIXA10W1200TML Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES,; MIXA10W1200TML
VI-B6J-EU

VI-B6J-EU

VI-B6J-EU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B6J-EU