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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FJN3301RTA

FJN3301RTA

FJN3301RTA Epitaxial Silicon Transistor, 2000-FNFLD; FJN3301RTA
PFC-1000

PFC-1000

PFC-1000 AC-DC Power Factor Correction Module, 1 Output, 1000W, Hybrid, FULL BRICK PACKAGE-7; PFC-1000
DF005-G

DF005-G

DF005-G Bridge Rectifier Diode, 1A, 50V V(RRM),; DF005-G
MUN2111T1G

MUN2111T1G

MUN2111T1G PNP Bipolar Digital Transistor (BRT), SC-59 3 LEAD, 3000-REEL; MUN2111T1G
J310RLRPG

J310RLRPG

J310RLRPG N-Channel JFET Transistor, 25 V, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; J310RLRPG
TD251N08

TD251N08

TD251N08 Silicon Controlled Rectifier, 410A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; TD251N08
MA3D752

MA3D752

MA3D752 Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 40V V(RRM), Silicon, TO-220AB, TO-220D-A1, 3 PIN; MA3D752
Q8012LH2

Q8012LH2

Q8012LH2 Alternistor TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB, ROHS COMPLIANT, PLASTIC, ISOLATED TO-220AB, 3 PIN; Q8012LH2
MURTA60040R

MURTA60040R

MURTA60040R 400V 600A Silicon Super Fast Recovery Rectifier in Three Tower Iso Package; MURTA60040R
C430MX500

C430MX500

C430MX500 Silicon Controlled Rectifier, 1250A I(T)RMS, 800000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, POW-R-DISC-4; C430MX500