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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BAS70DW-05-TP

BAS70DW-05-TP

BAS70DW-05-TP Rectifier Diode, Schottky, 4 Element, 0.07A, 70V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6; BAS70DW-05-TP
MP1008G-G

MP1008G-G

MP1008G-G Bridge Rectifier Diode, 10A, 800V V(RRM),; MP1008G-G
S2010R

S2010R

S2010R Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN; S2010R
IXGR55N120A3H1

IXGR55N120A3H1

IXGR55N120A3H1 Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ISOPLUS247, 3 PIN; IXGR55N120A3H1
VI-J0B-EY

VI-J0B-EY

VI-J0B-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J0B-EY
PB64

PB64

PB64 Bridge Rectifier Diode, 1 Phase, 6A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, PB-6, 4 PIN; PB64
VI-J3M-EZ

VI-J3M-EZ

VI-J3M-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J3M-EZ
CBS3504824

CBS3504824

CBS3504824 DC-DC Regulated Power Supply Module, 1 Output, 348W, Hybrid, ROHS COMPLIANT, PACKAGE-9; CBS3504824
FDS8842NZ

FDS8842NZ

FDS8842NZ N-Channel PowerTrench® MOSFET 40V, 14.9A, 7.0mΩ, 2500-REEL; FDS8842NZ
R6201630XXOO

R6201630XXOO

R6201630XXOO Rectifier Diode, 1 Phase, 1 Element, 300A, 1600V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2; R6201630XXOO