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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MDD175-28N1

MDD175-28N1

MDD175-28N1 Rectifier Diode, 1 Phase, 2 Element, 175A, 2800V V(RRM), Silicon, MODULE-3; MDD175-28N1
VS-26MB60A

VS-26MB60A

VS-26MB60A Bridge Rectifier Diode, 1 Phase, 25A, 600V V(RRM), Silicon, ROHS COMPLIANT, D-34, 4 PIN; VS-26MB60A
PHM8001

PHM8001

PHM8001 Power Field-Effect Transistor, 640A I(D), 150V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; PHM8001
SB80W06T-H

SB80W06T-H

SB80W06T-H Schottky Barrier Diode, 60V, 8A, Low IR, Monolithic Dual TP Common Cathode, DPAK / TP-FA, 500-BLKBG; SB80W06T-H
93MT120KB

93MT120KB

93MT120KB Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 6 Element; 93MT120KB
Q6012NH2TP

Q6012NH2TP

Q6012NH2TP TRIAC, 600V V(DRM), 12A I(T)RMS,; Q6012NH2TP
DTC114ECAT116

DTC114ECAT116

DTC114ECAT116 Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SST, 3 PIN; DTC114ECAT116
GA080TH65

GA080TH65

GA080TH65 Silicon Controlled Rectifier, 80000mA I(T), 6500V V(DRM); GA080TH65
L4004L558

L4004L558

L4004L558 4 Quadrant Logic Level TRIAC, 400V V(DRM), 4A I(T)RMS, TO-220AB, TO-220, 3 PIN; L4004L558
VS-16RIA60

VS-16RIA60

VS-16RIA60 Silicon Controlled Rectifier,; VS-16RIA60