IXGH10N300 Insulated Gate Bipolar Transistor, 18A I(C), 3000V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3; IXGH10N300
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.