#MITSUBISHI, #QM200DY_2H, #IGBT_Module, #IGBT, QM200DY-2H Power Bipolar Transistor, 200A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin,; QM200DY-2H
Manufacturer Part Number: QM200DY-2HPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X15Manufacturer: Mitsubishi ElectricRisk Rank: 5.74Collector Current-Max (IC): 200 AConfiguration: COMPLEXDC Current Gain-Min (hFE): 75Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X15Number of Elements: 2Number of Terminals: 15Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 1560 WQualification Status: Not QualifiedSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONVCEsat-Max: 2.5 V Power Bipolar Transistor, 200A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin,