Content last revised on February 26, 2026
QM200HA-H Mitsubishi Electric 600V 200A High Power Darlington Transistor Module
The Mitsubishi QM200HA-H is a high-power Darlington transistor module designed for robust switching in industrial environments. Engineered for efficiency and long-term reliability, this module features a 600V collector-emitter voltage and a 200A continuous collector current rating. As a high-gain N-channel switch, it integrates a fast-recovery freewheeling diode into an insulated package, simplifying the mechanical assembly of large-scale inverters and motor control systems. For engineers managing the maintenance of legacy hardware or designing new systems requiring high-current DC switching, the QM200HA-H remains a cornerstone of reliable power electronics.
Application Scenarios & Value
Optimizing Thermal Efficiency in Heavy-Duty Motor Drives
In industrial environments where Variable Frequency Drives (VFD) and Servo Drive systems operate under continuous load, thermal stress is the primary cause of semiconductor failure. The QM200HA-H addresses this challenge through its specialized insulated baseplate design, which allows for direct mounting on a common heatsink with other components. A critical engineering scenario involves the high startup current required by 400V AC motors in conveyor systems; the QM200HA-H handles these surges using its 200A capacity, ensuring the system remains within the Safe Operating Area during transient spikes. For designers requiring even higher current handling within the same architecture, the related QM300HA-H offers an upgraded collector current of 300A.
Beyond motor control, this module is a vital component in Uninterruptible Power Supply (UPS) systems. Its high current gain (hFE) reduces the power required by the base drive circuit, contributing to higher overall system efficiency. When integrated into Welding Power Supply equipment, the high-speed switching capability of the QM200HA-H ensures a stable arc and precise control over the power output. Understanding how to maintain these modules is crucial for uptime; engineers can refer to this guide on how to test an IGBT module with a multimeter for field diagnostic procedures.
Key Parameter Overview
Decoding the Specs for Enhanced Thermal Reliability
The technical specifications of the QM200HA-H highlight its suitability for high-voltage DC bus applications. The 600V Vces rating provides sufficient headroom for 220V/440V rectified lines, while the low saturation voltage minimizes conductive losses during operation.
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | Vcex | 600 | V |
| Collector Current (DC) | Ic | 200 | A |
| Collector Dissipation | Pc | 800 | W |
| DC Current Gain | hFE | 75 (min) | - |
| Isolation Voltage | Viso | 2500 | V |
Download the QM200HA-H datasheet for detailed specifications and performance curves.
Technical & Design Deep Dive
A Closer Look at Darlington Integration for High-Current Control
The internal architecture of the QM200HA-H utilizes a Darlington pair configuration. This cascading of two transistors allows the module to achieve a massive current gain (hFE), which means a relatively small base current can control the full 200A load. From an engineering perspective, this is like using a small hydraulic valve to move a massive piston; it significantly reduces the complexity and power requirements of the Gate Drive or base drive electronics. To understand the evolution from these Darlington modules to modern switching, engineers may find value in the IGBT vs MOSFET vs BJT guide.
Thermal management is where the QM200HA-H truly excels. The Thermal Resistance (Rth(j-c)) is optimized via a large surface area mounting plate, ensuring that heat generated at the junction is rapidly dissipated to the heatsink. This prevents "thermal runaway," a condition where rising temperatures lead to increased leakage and eventual destruction of the silicon. Ensuring proper Thermal Management through the use of high-quality thermal interface material (TIM) is non-negotiable for maintaining the long-term health of this module.
Industry Insights & Strategic Advantage
Maintaining Legacy Infrastructure in the Age of Modern Power Electronics
While newer technologies like Infineon TRENCHSTOP™ IGBT7 have entered the market, the QM200HA-H remains strategically relevant for the "Maintenance, Repair, and Operations" (MRO) sector. Many industrial CNC machines and older VFD systems were designed around the specific physical footprint and electrical characteristics of the Mitsubishi QM-series. Replacing these with modern IGBTs often requires expensive redesigns of the gate drive circuitry and mounting hardware. Therefore, maintaining a reliable supply of the QM200HA-H is a cost-effective strategy for extending the lifecycle of high-value industrial assets.
FAQ
How does the hFE rating of the QM200HA-H impact my base drive circuit design?
The high hFE (typically above 75 at full load) means your base drive circuit only needs to provide a fraction of the collector current to saturate the module. This allows for the use of smaller, more efficient drive components, reducing heat generation in the control board itself.
Can the QM200HA-H be used as a direct replacement for an IGBT module?
No, they are fundamentally different technologies. The QM200HA-H is a current-controlled Bipolar Darlington, whereas an IGBT Module is voltage-controlled. Replacing one with the other would require a complete redesign of the driving electronics. For understanding these differences, see our deep dive into IGBT structures.
For systems requiring high-reliability power switching in legacy or specialized high-current applications, the Mitsubishi QM200HA-H provides a time-tested solution that balances performance with physical robustness. For detailed procurement inquiries and technical support, contact our sales team to discuss your specific project requirements.
