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Mitsubishi QM20TD-H IGBT Module

Mitsubishi QM20TD-H: A 600V/20A dual Darlington transistor module. Its high 2500V isolation simplifies thermal design, ensuring reliability for compact motor drives and power supplies.

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 15
· Date Code: 2024+
. Available Qty: 229
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QM20TD-H Specification

QM20TD-H: Technical Deep Dive into the 20A, 600V Dual Darlington Transistor Module

Introduction to a Workhorse of Industrial Power Control

Engineered for Reliability and Simplified Design in Demanding Applications

The Mitsubishi QM20TD-H is a robust dual Darlington transistor module designed to deliver reliable performance in medium-power switching applications. This component integrates two 600V, 20A N-channel Darlington power transistors, each with a corresponding free-wheeling diode, into a single, electrically isolated package. Its key specifications include a collector-emitter voltage of 600V, a collector current of 20A, and a high isolation voltage of 2500V. The primary benefits are simplified circuit construction and enhanced thermal management, directly addressing the need for compact and dependable power stages. For engineers developing controllers for 200-240V AC line applications, this module provides a proven, integrated solution for managing inductive loads. With its balance of voltage headroom and current handling, the QM20TD-H is an optimal choice for small-scale motor drives and power supplies where design simplicity and long-term reliability are paramount.

Key Parameter Overview

Decoding the Specs for Robust System Design

The technical specifications of the QM20TD-H are foundational to its performance in industrial environments. The parameters below have been selected to provide engineers with the critical data needed for system design, thermal analysis, and reliability assessment.

Parameter Symbol Value Conditions
Collector-Emitter Voltage VCES 600V -
Collector Current (DC) IC 20A -
Collector Current (Pulse) ICP 40A -
Collector-Emitter Saturation Voltage VCE(sat) 2.5V (Max) IC = 20A, IB = 0.2A
Total Power Dissipation PC 125W TC = 25°C
Isolation Voltage Viso 2500V AC, 1 minute
Junction to Case Thermal Resistance (Transistor) Rth(j-c) 2.0°C/W -

Download the QM20TD-H datasheet for detailed specifications and performance curves.

Engineering Interpretation of Key Parameters:

  • VCES of 600V: This rating provides a critical safety margin for systems operating on 200V or 240V AC lines. It ensures the device can withstand voltage spikes and transients common in industrial environments, preventing catastrophic failure and enhancing the overall robustness of the end equipment.
  • Viso of 2500V: The high isolation voltage is a cornerstone of the module's design. Think of it as the robust insulation on a high-voltage cable; it ensures that the high potential of the semiconductor junction is safely separated from the grounded heatsink and chassis. This simplifies mechanical assembly, eliminates the need for fragile and often inconsistent external insulating pads, and improves overall system safety.

Application Scenarios & Value

System-Level Benefits in Motor Control and Power Conversion

The QM20TD-H is best suited for applications where a balance of performance, design simplicity, and reliability is essential. Its integrated nature delivers tangible value by reducing component count and simplifying assembly processes.

High-Fidelity Engineering Scenario: Small AC Motor Drives
An engineer designing a compact Variable Frequency Drive (VFD) for a conveyor belt system faces the challenge of creating a reliable, thermally stable inverter stage within a constrained space. The QM20TD-H directly addresses this. By housing two transistors in a half-bridge configuration, it immediately reduces the PCB footprint and simplifies the layout of the high-current traces. The critical challenge, however, is often thermal management. Using discrete components would require separate insulating washers and careful torque control during assembly, introducing variables that can lead to inconsistent thermal performance. The QM20TD-H's electrically isolated base removes this entire step, ensuring a predictable and efficient heat path to the heatsink. This allows the VFD to operate reliably under varying loads without risking thermal runaway, a critical factor for industrial automation equipment.

Additional core applications include:

  • Switching Mode Power Supplies (SMPS): Ideal for the main switching elements in power factor correction (PFC) stages or DC-DC converter topologies.
  • DC Motor Drives: Well-suited for H-bridge or chopper circuits used to control the speed and direction of DC motors.
  • General Purpose Inverters: Provides a dependable building block for creating low-to-medium power inverters for various industrial loads.

For systems that require higher current handling for more powerful motors, the related QM50DY-H offers a similar 600V rating but with a 50A current capability.

Frequently Asked Questions (FAQ)

Engineering Questions on the QM20TD-H

What is the primary advantage of the QM20TD-H's integrated Darlington structure with a free-wheeling diode?

The main advantage is high DC current gain (hFE), which means the transistor requires significantly less base current from the gate driver circuit to achieve full saturation. This can simplify the design of the drive stage. The integrated free-wheeling diode is essential for protecting the transistor from reverse voltage spikes generated by inductive loads like motor windings, eliminating the need for an external diode and saving board space.

How does the 2500V isolation voltage (Viso) simplify thermal design and improve safety?

The 2500V isolation rating means the module's mounting baseplate is internally insulated from the live electrical terminals. This allows the engineer to mount the module directly onto a grounded chassis or heatsink without any additional insulating layers (like mica or silicone pads). This not only reduces assembly time and component cost but also creates a more reliable and consistent thermal interface, leading to better heat dissipation and improved long-term reliability. It also inherently enhances safety by preventing high voltage from ever reaching the equipment's enclosure.

Can the two transistor units inside the QM20TD-H be used for two independent chopper circuits?

Yes. Because the two Darlington transistor units are electrically separate within the module (with commoned collectors but separate base and emitter terminals for each switch), they can be used to drive two independent loads in separate chopper (buck or boost) circuits, provided the total power dissipation and current limits of the module are respected.

A Strategic Approach to Proven Power Design

The QM20TD-H represents a strategic choice for systems that prioritize long-term operational reliability over cutting-edge switching speeds. Its integrated design and robust electrical isolation provide a direct path to simplified manufacturing and a more predictable thermal performance profile. By consolidating key components into a single, proven package, this module allows engineering teams to reduce design complexity and focus on system-level functionality, confident in the foundational reliability of the power stage. For legacy system upgrades or new designs in moderate-frequency industrial applications, the QM20TD-H offers a dependable and efficient engineering solution from a trusted manufacturer like Mitsubishi Electric.

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