Mitsubishi QM30TB1-H

QM30TB1-H Mitsubishi IGBT POWER TRANSISTOR MODUL

· Categories: IGBT
· Manufacturer: Mitsubishi
· Price: US$ 36 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 328
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on April 8, 2024

Options

.also available with powerfull chopper. For characteristics please refer to Inverter IGBT

1)Theatsink=25°C, unless otherwise specified

2)CAL=Controlled Axial Lifetime Technology(soft and fast recovery)

.For diagrams of the Chopper IGBT please fefer to QM30TB1-H

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1000V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector power dissipation Pc:400W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

 

Mitsubishi IGBT POWER TRANSISTOR MODULE

More from Mitsubishi

Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi