#TOSHIBA, #SG600J21, #IGBT_Module, #IGBT, SG600J21 Silicon Controlled Rectifier, 400 A, 600 V, GATE TURN-OFF SCR; SG600J21
Manufacturer Part Number: SG600J21Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: DISK BUTTON, O-CEDB-N2HTS Code: 8541.30.00.80Manufacturer: Toshiba America Electronic ComponentsRisk Rank: 5.8Additional Feature: PEAK TURN-OFF CURRENT IS 600ACircuit Commutated Turn-off Time-Nom: 18 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 350 V/usDC Gate Trigger Current-Max: 350 mADC Gate Trigger Voltage-Max: 2 VJESD-30 Code: O-CEDB-N2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 115 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 400 ARepetitive Peak Off-state Leakage Current-Max: 50000 µARepetitive Peak Off-state Voltage: 600 VRepetitive Peak Reverse Voltage: 300 VSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: GATE TURN-OFF SCR Silicon Controlled Rectifier, 400 A, 600 V, GATE TURN-OFF SCR