#Semikron, #SK60GB123, #IGBT_Module, #IGBT, SK60GB123 TRANSISTOR IGBT POWER MODULE HALF BRIDGE 1.2kV V(BR)CES 40A I(C) ;
SK60GB123 Features .Compact design .One screw mounting .Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) .High short circuit capability .Low tail current with low temperature dependence Typical Applications* .Switching(not for linear use) .Inverter .Switched mode power supplies .UPS Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:40A Collector current Icp:100A Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C TRANSISTOR IGBT POWER MODULE HALF BRIDGE 1.2kV V(BR)CES 40A I(C)