SK60GB123 Semikron 1200V 60A Single IGBT Module

Content last revised on December 3, 2025

SK60GB123: A Deep Dive into the SEMITRANS 2 IGBT Module

The Semikron SK60GB123 is a robust IGBT module engineered for high-reliability power switching applications. Featuring core specifications of 1200V | 60A | SEMITRANS 2 Package, this component provides a foundation for durable and efficient power converter designs. Key benefits include enhanced thermal management through its industry-proven housing and reduced conduction losses. It directly addresses the need for a dependable single-switch topology in demanding industrial environments. For industrial power converters up to ~30 kW requiring a robust single-switch topology, the SK60GB123 offers a prime balance of thermal performance and efficiency.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The technical specifications of the SK60GB123 are foundational to its performance in power systems. Each parameter provides critical data for design engineers to model system behavior, ensure reliability, and optimize efficiency. The low collector-emitter saturation voltage (VCE(sat)) is particularly noteworthy, as it directly correlates to lower conduction losses during operation. Think of VCE(sat) as the 'toll' the current pays to pass through the switch; a lower toll means less energy is wasted as heat, improving overall system efficiency. The thermal resistance from junction to case is another pivotal metric, dictating how effectively heat can be evacuated from the semiconductor die.

Download the SK60GB123 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in Industrial Power Conversion

The SK60GB123 is engineered for robust performance in a variety of switching applications, including industrial motor drives, UPS (Uninterruptible Power Supply) systems, and switched-mode power supplies. Consider the design of a mid-power DC-DC Boost Converter, a common building block in solar energy systems and battery charging applications. A primary engineering challenge in this scenario is effective thermal management to ensure long-term reliability and prevent premature component failure. The SK60GB123's specified Rth(j-c) of 0.4 K/W is a critical enabler. This low thermal resistance facilitates efficient heat transfer from the IGBT die to the heatsink, allowing designers to either utilize a more compact and cost-effective Heatsink Design or push the system to higher operational power levels without exceeding the maximum junction temperature. This directly translates to increased power density and a lower bill of materials. For systems requiring a different topology or higher current handling, the related SKM75GB128D offers a dual IGBT configuration in a similar voltage class.

What is the primary benefit of its SEMITRANS package? It ensures robust mechanical stability and reliable thermal performance. Furthermore, the single-switch "chopper" configuration makes it an ideal component for implementing boost, buck, or flyback converter topologies, simplifying the power stage layout. For more insights on optimizing the control interface, explore these practical tips for robust IGBT gate drive design.

Technical Deep Dive

A Closer Look at the SEMITRANS 2 Package for Long-Term Reliability

The long-term reliability of a power module is not solely determined by its silicon. The packaging plays an equally critical role, and the SEMITRANS 2 housing used for the SK60GB123 is a testament to this principle. This industry-standard package is built around a Direct Copper Bonded (DCB) aluminum oxide ceramic substrate, which provides excellent electrical isolation while ensuring efficient heat transfer. The module's baseplate acts like the foundation of a house; the lower the thermal resistance, the wider and more unobstructed the pathway for heat to exit. The 0.4 K/W junction-to-case thermal resistance of the SK60GB123 is this wide, efficient pathway in action, directly enabling superior Thermal Management. This robust construction minimizes thermally-induced mechanical stress, which is a common failure point in lesser designs, thereby contributing to a longer operational lifespan, particularly in applications with frequent temperature cycles like a Solar Inverter.

Frequently Asked Questions (FAQ)

How does the Rth(j-c) of 0.4 K/W for the SK60GB123 directly influence heatsink selection?
A lower thermal resistance from junction to case, such as the 0.4 K/W specified for this module, means that for every watt of heat generated, the IGBT's junction temperature will rise by only 0.4°C above the case temperature. This high efficiency in heat transfer allows engineers to select a smaller, lighter, and more cost-effective heatsink to maintain the junction within its safe operating area. Alternatively, it allows for higher power dissipation for a given heatsink size, increasing the system's power density.

What is the practical benefit of the CAL (Controlled Axial Lifetime) diode integrated into the SK60GB123?
The integrated CAL freewheeling diode is engineered for a "soft" reverse recovery characteristic. In practical terms, this means it turns off more smoothly, generating lower voltage overshoots and reducing electromagnetic interference (EMI). This can simplify or even eliminate the need for external snubber circuits, saving board space and component cost, while also making it easier to meet stringent EMC regulations in applications like Servo Drive systems.

For procurement inquiries or to access further technical documentation on the SK60GB123, please contact our technical sales team.