Semikron SKM195GB126DN | Engineered for High-Frequency, High-Efficiency Power Conversion
The Semikron SKM195GB126DN is a 1200V, 195A single IGBT module designed for engineers who demand a balance of high performance, robust reliability, and thermal efficiency. Leveraging Semikron's advanced chip and packaging technology, this module is not just a component but a foundational building block for modern high-power electronics, delivering tangible benefits in system density and operational cost.
Product Highlights Overview
- Advanced IGBT4 Technology: Employs Trench Field Stop IGBT4 chips, providing exceptionally low collector-emitter saturation voltage (VCE(sat)) and optimized switching characteristics for reduced power losses.
- High-Performance Diode: Integrates a CAL 4F (Controlled Axial Lifetime) free-wheeling diode renowned for its soft recovery behavior, which minimizes electromagnetic interference (EMI) and voltage overshoots.
- Robust SEMITRANS 2 Package: Housed in a durable, industry-standard package with an insulated copper baseplate, ensuring excellent thermal transfer and simplified mechanical integration.
- Single Chopper Configuration: The single IGBT topology (chopper/brake chopper) offers design flexibility for a range of applications, including DC-DC converters, brake circuits, and switched-mode power supplies.
A Technical Deep Dive into Core Advantages
Two core technologies set the Semikron SKM195GB126DN apart: the IGBT4 silicon and the CAL 4F diode. Understanding these is key to appreciating the module's value in a power system.
First, the Trench Field Stop IGBT4 represents a significant evolution in power switch design. The trench gate structure allows for a higher channel density, which directly contributes to its very low VCE(sat). This means lower conduction losses, a critical factor in high-current applications where every millivolt saved translates into reduced heat generation and higher overall efficiency. The integrated field stop layer further refines performance by enabling faster, more controlled turn-off behavior, reducing switching losses—a crucial benefit for systems operating at higher frequencies. This meticulous optimization of both on-state and switching performance is central to the module's efficiency credentials.
Second, the co-packaged CAL 4F Free-Wheeling Diode is engineered for harmony with the IGBT. A common failure point in lesser modules is a poorly matched diode that exhibits "snappy" or abrupt reverse recovery. The CAL 4F, by contrast, is engineered for "soft" recovery. This controlled, smoother turn-off characteristic drastically reduces voltage spikes and high-frequency oscillations (ringing). For the design engineer, this translates directly into lower EMI emissions, reducing the complexity and cost of filtering, and enhanced system reliability by mitigating voltage stress on the switch. Understanding this synergy is crucial; it's a perfect example of how an expertly designed IGBT module can simplify the entire power stage design.
Key Parameters at a Glance
The following table provides a snapshot of the critical performance metrics for the SKM195GB126DN. For a comprehensive list of parameters and operating curves, we recommend consulting the official datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC @ Tcase = 80°C) | 195 A |
| Collector-Emitter Saturation Voltage (VCE(sat), typ. @ IC,nom) | 1.7 V |
| Gate-Emitter Leakage Current (IGES) | 400 nA |
| Thermal Resistance, Junction to Case (Rth(j-c) per IGBT) | 0.17 K/W |
| Short-Circuit Withstand Time (tsc) | 10 µs |
For detailed schematics and application notes, you can download the SKM195GB126DN datasheet.
Application Scenarios & Value Proposition
The specific engineering of the Semikron SKM195GB126DN makes it an ideal solution for several demanding applications:
- Industrial Motor Drives: In brake chopper circuits for Variable Frequency Drives (VFDs), the module's high current handling and excellent thermal performance allow for effective and reliable energy dissipation during motor deceleration, protecting the DC link.
- High-Power SMPS and UPS: The module's combination of low conduction and switching losses results in higher efficiency for DC-DC boost converters or the inverter stage of an uninterruptible power supply, reducing cooling requirements and improving power density.
- Induction Heating Systems: The robust thermal design and low VCE(sat) are critical for resonant inverters used in induction heating, where the module operates under high-current, continuous-duty conditions. The efficiency gains directly lower operating costs.
Frequently Asked Questions (FAQ)
What is the primary advantage of the chopper configuration in the SKM195GB126DN?
The single IGBT chopper configuration provides maximum design flexibility. It's the fundamental building block for a DC-DC boost converter, a buck converter, or a brake chopper circuit. Unlike a half-bridge module, it doesn't predefine the topology, allowing engineers to implement it in single-ended converter designs or as a standalone high-power switch in various industrial control applications without the unused components of a more complex module.
How does the CAL 4F diode impact system-level design compared to standard diodes?
The soft recovery of the CAL 4F diode significantly reduces di/dt and dv/dt during switching, leading to lower conducted and radiated EMI. This means engineers can often use smaller, less expensive snubber circuits and EMI filters. In systems with strict EMC requirements, this can be a major advantage, accelerating compliance testing and reducing the overall bill of materials (BOM). For a deeper understanding of potential issues, read our guide on IGBT failure analysis.
For complex power system designs or to discuss how the SKM195GB126DN can optimize your specific application, please contact our technical team for expert consultation.
