High-performance AI data centers are reshaping semiconductor design and investment trajectories like no technology we’ve seen. As recently as 2022, spending on AI infrastructure was in the vicinity of $15 billion. This year, expenditures could easily top $60 billion. Yes, that sucking sound you hear is the oxygen being pulled from every investment plan and […]

We are pleased to announce that IDENTA, a provider of secure identification and automotive card system solutions, has joined the MIFARE Partner Program as an advanced partner. This collaboration represents an important step in enhancing security and efficiency in both the identification and automotive sectors. About IDENTA Founded in 1967, IDENTA has been developing modern […]

Solving Driver Engagement and Safety Challenges The automotive industry is evolving, with a significant market gap in high-sensitivity, multi-channel impedance measurement solutions for driver engagement, especially in vehicles equipped with Advanced Driver Assistance Systems (ADAS). Currently, existing solutions often fall short in providing the sensitivity and reliability needed for accurate driver monitoring and interaction. Renesas’ […]

The Audio Pre-processing Front-end (APF) is an ultra-lightweight library of voice processing algorithms designed to enhance Voice Command Recognition (VCR) and speech quality in noisy environments. It utilizes acoustic noise suppression which offers several benefits in voice command recognition, particularly in locations where significant levels of ambient noise typically interfere with VCR. Here are some […]

Mitsubishi CM600HA-24A IGBT module: 1200V/600A for demanding drives. Its low 0.034 K/W thermal resistance ensures high reliability and enables compact, power-dense system designs.

QM300HH-2H Mitsubishi transistor modules high power switching use 1000V 300A

Mitsubishi RM100DZ-H: 1200V/100A dual IGBT with low Vce(sat) for high efficiency and proven reliability in demanding industrial motor drives and UPS systems.

CM200DX-24A Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

QM75DY-HB HIGH POWER SWITCHING USE INSULATED TYPE IGBT: 75A 500V

Mitsubishi CM150E3Y-12E: 600V/150A 3-phase IGBT for efficient motor drives. Low Vce(sat) & integrated design reduce thermal load & complexity, ensuring compact, reliable performance.