#Mitsubishi, #2SC3319, #IGBT_Module, #IGBT, 2SC3319 The BUW25 is a silicom mulitepitaxial biplanal biplanar* NPN transistor in Jedec TO-3 metal case. ;
HIGH VOLTAGE POWER SWITCH The BUW25 is a silicom mulitepitaxial biplanal biplanar* NPN transistor in Jedec TO-3 metal case. It is particularly intended for high voitage,fast svitching and industrial applications ABSOLUTE NAXIMUM RATINGS Collector-emitter voltage 600V Gate-emitter voltage 400V Emitter-base voltage 8V Collector Current 10A Base current 4A Total power dissipation at 125W Storage temperature -65 to 200 ℃ Junction temperature 200 ℃ Type Designator: 2SC3319. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 100 W. Maximum Collector-Base Voltage The BUW25 is a silicom mulitepitaxial biplanal biplanar* NPN transistor in Jedec TO-3 metal case.