FUJI 7MBP100VDA120-50 IGBT Module

Features

•Temperature protection provided by directly detecting the junction temperature of the IGBTs

• Low power loss and soft switching

• High performance and high reliability IGBT with overheating protection

• Higher reliability because of a big decrease in number of parts in built-in control circuit

Maximum Ratings and Characteristics Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)

• Collector-Emitter Voltage (VCES): 1200V
• Short Circuit Voltage (VSC):

  • 400V (for 1ms)
  • 800V (for continuous operation)

• Inverter Collector Current:

  • DC (Continuous): -100A
  • Pulse (1ms): -200A
  • Duty cycle: 89%

• Reverse Collector Current:

  • DC (Continuous): -100A

• Collector Power Dissipation (PC):

  • 417W (for 1 device)

• Brake Collector Current:

  • DC (Continuous): -50A
  • Pulse (1ms): -100A

• Forward Current of Diode:

  • IF: 50A

• Collector Power Dissipation (PC):

  • 250W (for 1 device)

• Supply Voltage of Pre-Driver (VCC): 0.5-20V
• Input Signal Voltage (Vin): -0.5V to VCC + 0.5V
• Alarm Signal Voltage (VALM): -0.5V to VCC
• Alarm Signal Current (IALM): -20mA
• Junction Temperature (Tj): -150°C
• Operating Case Temperature (Topr): -20 to 110°C
• Storage Temperature (Tstg): -40 to 125°C
• Solder Temperature (Tsol): 260°C
• Isolating Voltage (Viso): 2500V AC rms
• Screw Torque (Terminal - M4): 1.7Nm