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FUJI 7MBR35UB120

  • 7MBR35UB120

7MBR35UB120 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

· Categories: IGBT
· Manufacturer: FUJI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 415
90-Day Warranty
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Content last revised on May 2, 2024

Features

· Low VCE(sat)

· Compact Package

· P.C. Board Mount Module

· Converter Diode Bridge Dynamic Brake Circuit

Applications

· Inverter for Motoe Drive

· AC and DC Servo Drive Amplifier

· Uninterruptible Power Supply

Absolute maximum ratings (Tc=25°C unless otherwise specified)

· Collector-Emitter voltage Vces:1200V

· Gate-Emitter voltage VGES:±20V

· Collector current Ic Continuous Tc=25°C :35A

· Collector current Icp 1ms Tc=25°C :70A

· Collector power dissipation Pc:160W

· Isolation Voltage VIsol (AC 1 minute) :2500V

· Operating junction temperature Tj:+150°C

· Storage temperature Tstg :-40 to +125°C

· Mounting screw torque 3.5 N·m

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