General Description The FZ1200R17HE4 is an Insulated-Gate Bipolar Transistor (IGBT) module manufactured by Infineon, offering a collector-emitter voltage of 1700V and a collector current of 1200A. This module is renowned for its high power handling capabilities and efficiency, making it suitable for applications such as high power converters and motor drives. Electrical Characteristics Collector-Emitter Voltage […]