Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

IGBT TECH

Explore in-depth technical guides, application notes, and expert analysis on IGBT Modules. Stay ahead with insights into design, selection, thermal management, and cutting-edge applications like EVs and renewable energy.

Evaluating IGBT Modules: Fuji 6MBI100FC-060 and Fuji 2MBI200U4H-120

Evaluating IGBT Modules: Fuji 6MBI100FC-060 and Fuji 2MBI200U4H-120

Selecting the appropriate Insulated Gate Bipolar Transistor (IGBT) module is critical for achieving optimal performance in power electronic applications. Here, we compare two IGBT modules from Fuji Electric: the 6MBI100FC-060 and the 2MBI200U4H-120. Each module has distinct characteristics tailored to different power requirements and applications. Fuji 6MBI100FC-060 IGBT Module The Fuji 6MBI100FC-060 is designed for […]
SanRex PK250HB160 and Infineon FS450R12KE3

SanRex PK250HB160 and Infineon FS450R12KE3

The SanRex PK250HB160 and Infineon FS450R12KE3 are high-performance IGBT modules designed for demanding industrial applications. SanRex PK250HB160 IGBT Module The SanRex PK250HB160 is a robust 1600V, 250A IGBT module designed for various industrial and power control systems. It is suitable for high-power applications, including AC/DC motor drives, heating control systems, and static switches. Key Features: […]
SKKD-75F12: High-Performance IGBT Module for Power Electronics

SKKD-75F12: High-Performance IGBT Module for Power Electronics

The SKKD-75F12, manufactured by SEMIKRON, is an Insulated Gate Bipolar Transistor (IGBT) module engineered for demanding power electronics applications. SKKD-75F12 Key Specifications and Features Manufacturer: SEMIKRON Collector-Emitter Voltage (VCES): 1200V Continuous Collector Current (IC): 75A Gate-Emitter Voltage (VGE): ±20V Collector-Emitter Saturation Voltage (VCE(sat)): 2.2V (typical) Maximum Operating Temperature: -40°C to 150°C Isolation Voltage: 2500V AC […]
Harnessing the Power of IXYS Rectifier Modules: VUO62-12NO7 and VUO86-16NO7

Harnessing the Power of IXYS Rectifier Modules: VUO62-12NO7 and VUO86-16NO7

Introduction IXYS is a leading manufacturer of high-performance rectifier modules, designed to provide superior efficiency and reliability in various industrial applications. Two notable products in their lineup are the VUO62-12NO7 and the VUO86-16NO7. These modules are engineered to meet the rigorous demands of modern electrical systems, ensuring optimal performance and longevity. Product Overview VUO62-12NO7   […]
Introduction of Fuji 2MBI200TA-060-01, 6DI75MB-050, and IXYS VUO62-12NO7 Modules

Introduction of Fuji 2MBI200TA-060-01, 6DI75MB-050, and IXYS VUO62-12NO7 Modules

Overview This document provides an introduction and comparison of three power semiconductor modules: Fuji 2MBI200TA-060-01, Fuji 6DI75MB-050, and IXYS VUO62-12NO7. Detailed Specifications Feature 2MBI200TA-060-01 6DI75MB-050 VUO62-12NO7 Manufacturer Fuji Electric Fuji Electric IXYS Type IGBT Module IGBT Module Rectifier Diode Module Current Rating 200 Amperes 75 Amperes 48 Amperes Voltage Rating 600 Volts 500 Volts 1200 […]
Infineon TD320N16S0F and Toshiba MIG75Q7CSB1X

Infineon TD320N16S0F and Toshiba MIG75Q7CSB1X

The Infineon TD320N16S0F and Toshiba MIG75Q7CSB1X are both powerful IGBT modules designed for efficient energy conversion in various high-power applications. Although they serve similar purposes, they come with different features that cater to distinct industrial needs. Infineon TD320N16S0F Overview The TD320N16S0F is a robust Thyristor Diode Module from Infineon, designed to handle up to 320 […]
Detailed Analysis of Semikron SKM145GB128DN and SEMIX703GB126V1 IGBT Modules

Detailed Analysis of Semikron SKM145GB128DN and SEMIX703GB126V1 IGBT Modules

In the rapidly evolving landscape of power electronics, the choice of IGBT modules plays a pivotal role in ensuring system efficiency and reliability. This article provides a comprehensive examination of the Semikron SKM145GB128DN and SEMIX703GB126V1 IGBT modules. Technical Specifications Parameter SKM145GB128DN SEMIX703GB126V1 Manufacturer Semikron Semikron Collector-Emitter Voltage 1200V 1200V Collector Current 250A 100A Configuration Half-Bridge […]
Mitsubishi CM150DY-24H and CM400DY-12NF IGBT Modules

Mitsubishi CM150DY-24H and CM400DY-12NF IGBT Modules

Overview Both the CM150DY-24H and CM400DY-12NF are Insulated Gate Bipolar Transistor (IGBT) modules manufactured by Mitsubishi, designed for high-power applications. Key Parameters 1. Voltage and Current Ratings: CM150DY-24H: Collector-Emitter Voltage (VCES): 1200V Collector Current (IC): 150A Peak Collector Current (ICM): 300A CM400DY-12NF: Collector-Emitter Voltage (VCES): 600V Collector Current (IC): 400A Peak Collector Current (ICM): 800A […]
The Mitsubishi PM75CS1E120 IGBT module

The Mitsubishi PM75CS1E120 IGBT module

The Mitsubishi PM75CS1E120 IGBT module is a versatile and robust power semiconductor device, ideal for high-performance applications such as inverters and motor drives. This module features a 1200V, 75A rating, making it suitable for medium to high power applications. Key Features High Voltage and Current Ratings: The PM75CS1E120 offers a maximum collector-emitter voltage of 1200V […]
Toshiba MG75N2YS40 and Semikron SKKT57/16E

Toshiba MG75N2YS40 and Semikron SKKT57/16E

The Toshiba MG75N2YS40 and Semikron SKKT57/16E are highly regarded power modules, each serving distinct purposes in high-power industrial applications such as motor drives, inverters, and energy management systems. Here, we’ll delve deeper into their features, applications, and why they are essential in modern power electronics. Toshiba MG75N2YS40 IGBT Module The Toshiba MG75N2YS40 is a high-efficiency […]