Content last revised on December 14, 2023
BSM100GB120DLC Product Category: IGBT Modules BSM100GB120DLC Manufacturer: Infineon RoHS: No Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.1 V Continuous Collector Current at 25 C: 200 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 780 W Package / Case: 62 mm Maximum Operating Temperature: + 125 C Brand: Infineon Technologies Height: 30.5 mm Length: 106.4 mm Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 10 Width: 61.4 mm IGBT Modules 1200V 100A DUAL