Content last revised on January 5, 2026
BSM100GB170DN2 Manufacturer: Infineon Product Category: IGBT Modules RoHS: No Brand: Infineon Technologies Product: IGBT Silicon Modules Configuration: Half Bridge Collector- Emitter Voltage VCEO Max: 1700 V Collector-Emitter Saturation Voltage: 3.4 V Continuous Collector Current at 25 C: 145 A Gate-Emitter Leakage Current: 320 nA Pd - Power Dissipation: 1 kW Package / Case: Half Bridge2 Maximum Operating Temperature: + 150 C Maximum Gate Emitter Voltage: 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 10 IGBT: 100A 1700V; IGBT Modules 1700V 100A DUAL
