CLK70AA160 | Robust 1200V IGBT for High-Reliability Power Conversion
The CLK70AA160 is an engineered solution for power electronics designers who prioritize reliability and thermal efficiency in demanding, high-power applications. This 1200V / 70A half-bridge IGBT module is built to deliver consistent performance, providing a stable and cost-effective core for your next power stage design.
- Optimized Conduction and Switching Balance: Features a low saturation voltage (VCE(sat)) to minimize static losses, coupled with a well-controlled switching characteristic to manage dynamic losses effectively.
- Superior Thermal Performance: Engineered with a low thermal resistance from junction to case (Rth(j-c)), ensuring efficient heat evacuation and enhancing system reliability under heavy loads.
- Industry Standard Footprint: Housed in a standard package, the CLK70AA160 facilitates straightforward integration into existing designs and simplifies new layouts, reducing development time.
- Robust Safe Operating Area (SOA): Designed with a wide SOA and excellent short-circuit withstand time, offering resilience against unexpected load conditions and fault events.
Key Technical Specifications
The following table provides a snapshot of the CLK70AA160's critical electrical and thermal characteristics. For a comprehensive analysis, designers should reference the official datasheet. Download the CLK70AA160 Datasheet for complete specifications and performance curves.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Continuous Collector Current (I_C) @ T_c=80°C | 70 A |
| Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=70A, T_j=125°C | 2.1 V (Typ.) |
| Short-Circuit Withstand Time (t_sc) | ≥ 10 µs |
| Thermal Resistance, Junction-to-Case (R_th(j-c)) per IGBT | 0.24 K/W (Typ.) |
| Maximum Junction Temperature (T_j,max) | 150 °C |
Application Scenarios & Engineering Value
The CLK70AA160 IGBT module is not just a component; it's a problem-solver for specific engineering challenges across various industries.
- Variable Frequency Drives (VFDs): In industrial motor control, the module's low VCE(sat) directly reduces power dissipation. This translates to smaller heatsinks, lower enclosure temperatures, and ultimately, higher system efficiency for the VFD.
- Uninterruptible Power Supplies (UPS): For mission-critical UPS systems, reliability is paramount. The CLK70AA160’s robust thermal design and high surge current capability ensure stable operation during grid-to-battery transitions and demanding load steps, preventing system failure.
- Welding Power Supplies: The harsh, cyclical nature of welding demands components that can withstand repeated thermal stress. This module’s excellent thermal cycling capability and strong short-circuit rating provide the durability needed for consistent, high-quality welds.
- Solar Inverters: In grid-tied solar applications, maximizing energy harvest is key. The module's balanced efficiency profile minimizes power loss during DC-to-AC conversion, contributing to a higher overall yield for the solar installation.
Technical Deep Dive: Where Performance Originates
Understanding the technology behind the specifications is crucial for optimal design. The CLK70AA160's performance is rooted in two core engineering principles.
Optimized Thermal Pathway
A component's lifespan is intrinsically linked to its operating temperature. The CLK70AA160 features an exceptionally low junction-to-case thermal resistance (R_th(j-c)). This isn't just a number; it represents a highly efficient thermal pathway, allowing heat generated within the silicon to be transferred to the heatsink with minimal opposition. This superior thermal management allows the module to run cooler under load, which directly enhances its power cycling capability and long-term reliability. To fully grasp the impact, it's essential to understand why Rth matters in unlocking thermal performance.
Engineer's FAQ for the CLK70AA160
- What are the recommended gate drive voltage levels for this module?For optimal performance and to ensure robust noise immunity, a bipolar gate drive voltage is recommended. A typical configuration is +15V for turn-on and -5V to -15V for turn-off. The negative turn-off voltage is critical in preventing parasitic turn-on induced by the Miller effect, especially in half-bridge topologies. For further insights, review these practical tips for robust gate drive design.
- Is the CLK70AA160 suitable for parallel operation to increase current capacity?Yes, paralleling is feasible. The IGBT chips within this module exhibit a positive temperature coefficient for V_CE(sat), which aids in natural current sharing between paralleled modules. However, for successful implementation, designers must ensure symmetrical layout for power and gate drive paths to minimize stray inductance mismatches and use individual gate resistors for each module to dampen potential oscillations.
For detailed application support or to discuss your specific design requirements for the CLK70AA160, please contact our technical team.
