#Mitsubishi, #CM100TU_24H, #IGBT_Module, #IGBT, CM100TU-24H Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
Manufacturer Part Number: CM100TU-24H
ECCN Code: EAR99
Manufacturer: Powerex Power Semiconductors
Risk Rank: 5.21
Case Connection: ISOLATED
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X17
Number of Elements: 6
Number of Terminals: 17
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 650 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: MOTOR CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 650 ns
Turn-on Time-Nom (ton): 100 ns
VCEsat-Max: 3.7 V
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel