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Mitsubishi CM100TU-24H IGBT Module

CM100TU-24H

CM100TU-24H Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 95
· Date Code: 2017+
. Available Qty: 54
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CM100TU-24H Specification

Manufacturer Part Number: CM100TU-24H

ECCN Code: EAR99

Manufacturer: Powerex Power Semiconductors

Risk Rank: 5.21

Case Connection: ISOLATED

Collector Current-Max (IC): 100 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X17

Number of Elements: 6

Number of Terminals: 17

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 650 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: MOTOR CONTROL

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 650 ns

Turn-on Time-Nom (ton): 100 ns

VCEsat-Max: 3.7 V

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

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