Content last revised on February 1, 2026
CM150RX1-24T IGBT Module: Technical Product Analysis
M2. Introduction & Key Highlights
The Mitsubishi CM150RX1-24T is a 1200V single IGBT module engineered to deliver superior efficiency in demanding power conversion systems. Leveraging advanced CSTBT™ technology, this module provides an optimal balance between low power loss and robust switching performance. Its key specifications are: 1200V | 150A | VCE(sat) of 1.9V (typ). The primary engineering benefits include significantly reduced thermal loads and enhanced overall inverter efficiency. For designers of motor drives or power supplies wondering about its suitability for PWM applications, the module's integrated fast-recovery freewheeling diode and optimized switching characteristics provide a reliable solution. For industrial drive applications up to 75kW that prioritize high efficiency and thermal stability, the CM150RX1-24T offers a robust and well-balanced performance profile.
B3. Key Parameter Overview
A Data-Centric Look at Efficiency and Thermal Performance
The technical specifications of the CM150RX1-24T are centered on achieving high-efficiency power switching. The low collector-emitter saturation voltage (VCE(sat)) is a critical parameter that directly minimizes conduction losses, while the thermal resistance figures dictate the component's ability to dissipate heat effectively, ensuring reliability under load. Below is a summary of its defining characteristics.
| Parameter | Value | Conditions |
|---|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V | Tj = 25°C |
| Collector Current (Ic) | 150 A | Tc = 25°C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.9 V (typ), 2.4 V (max) | Ic = 150A, Vge = 15V, Tj = 25°C |
| Gate-Emitter Voltage (Vges) | ±20 V | |
| Thermal Resistance (Rth(j-c)) IGBT | 0.16 °C/W (max) | |
| Thermal Resistance (Rth(j-c)) Diode | 0.28 °C/W (max) | |
| Maximum Junction Temperature (Tjmax) | 150 °C |
Note: The parameters listed above are a selection of key values. These figures are subject to change.
Download the CM150RX1-24T datasheet for detailed specifications and performance curves.
B2. Application Scenarios & Value
System-Level Benefits in Industrial Drives and Power Conversion
The CM150RX1-24T is purpose-built for applications where energy efficiency and thermal management are paramount. Its single-switch topology makes it a versatile building block for various power converter designs.
- Variable Frequency Drives (VFDs): In industrial motor control, a primary engineering challenge is managing the heat generated within the drive cabinet. The CM150RX1-24T's low VCE(sat) of 1.9V directly addresses this. This value can be thought of as the "energy toll" for current passing through the device; a lower toll means less energy is wasted as heat. This reduction in conduction losses allows for smaller heatsink designs or greater thermal margin in enclosed, high-density Variable Frequency Drive (VFD) systems.
- Switch-Mode Power Supplies (SMPS): For high-power industrial SMPS and UPS systems, efficiency is a direct factor in operational cost. The module's optimized switching characteristics, a hallmark of Mitsubishi's CSTBT™ technology, minimize the energy lost during on/off transitions, contributing to higher overall system efficiency that can help meet stringent energy standards.
- Welding Equipment: The module's robust 150A current rating and solid thermal performance provide the reliability needed to handle the demanding, cyclical loads found in industrial welding power sources.
This module provides a solid foundation for power stages in the 30kW to 75kW range. For systems requiring a higher current rating within a similar package, the CM200TXPA-24T offers a 200A capability, facilitating scalability in design.
B7. Frequently Asked Questions (FAQ)
Engineering Inquiries on Performance and Integration
How does the VCE(sat) of 1.9V (typical) directly impact thermal design?
A lower VCE(sat) value directly reduces the power dissipated as heat during the IGBT's on-state (P_cond = VCE(sat) * Ic). For a system designer, this means that for the same output current, less heat is generated. This can lead to a smaller, lower-cost heatsink, improved system reliability due to lower operating temperatures, or increased power density within the same enclosure size.
What is the primary benefit of the single-unit configuration in the CM150RX1-24T?
The single-unit topology offers maximum design flexibility. Engineers can use it as a fundamental building block for various converter topologies, such as chopper circuits, single-phase bridges, or as individual switches in a three-phase inverter. This modularity simplifies inventory management and allows for customized power stage layouts tailored to specific mechanical or electrical requirements, a key consideration in complex Servo Drive applications.
Is a negative gate voltage required during turn-off for the CM150RX1-24T?
While the datasheet specifies performance characteristics at Vge = 15V (turn-on) and 0V (turn-off), applying a small negative gate voltage (e.g., -5V to -15V) during turn-off is a common best practice in many industrial applications. This provides a greater noise margin against parasitic turn-on induced by high dv/dt, enhancing the system's immunity to electromagnetic interference (EMI) and improving overall robustness, particularly in designs with high Pulse Width Modulation (PWM) frequencies.
B1. Technical Deep Dive
Inside the CSTBT™ Structure: The Engineering Behind Low-Loss Switching
A core element defining the CM150RX1-24T's performance is Mitsubishi's proprietary Carrier Stored Trench Gate Bipolar Transistor (CSTBT™) technology. This advanced chip structure is engineered to overcome a classic trade-off in IGBT design: the inverse relationship between conduction losses (VCE(sat)) and switching speed. Conventional IGBTs often have to sacrifice one for the other.
The CSTBT™ design introduces an additional carrier storage layer near the collector side of the IGBT chip. This can be conceptualized like a temporary reservoir for charge carriers. When the IGBT is on, this reservoir helps to dramatically reduce the on-state resistance, leading to the module's very low VCE(sat). However, unlike older technologies where this stored charge would slow down the turn-off process, the trench gate structure allows for this charge to be swept out much more efficiently when the device is turned off. This enables faster switching and lower turn-off energy loss (Eoff). The result is a device that excels in both critical phases of operation—low waste during conduction and minimal loss during switching—a key requirement for modern, high-frequency power electronics.
Strategic Outlook
A Strategic Component for Future-Proof Power Designs
Selecting the CM150RX1-24T is a strategic decision for engineers developing next-generation industrial systems. As global efficiency standards like IE3 and IE4 for motors become more stringent, the inherent low-loss characteristics of this module provide a direct path to compliance. Its standard industrial footprint ensures it can be integrated into existing design platforms while offering a significant performance uplift. By architecting systems around highly efficient and reliable components like this IGBT, engineering teams can deliver products with a lower total cost of ownership, driven by reduced energy consumption and enhanced long-term durability. For more information on IGBT selection, see our guide on the core trio of IGBT selection: voltage, current, and thermal management.
