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MITSUBISHI CM200E3Y-12E

  • CM200E3Y-12E

CM200E3Y-12E Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel; CM200E3Y-12E

· Categories: IGBT
· Manufacturer: MITSUBISHI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 132
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Content last revised on July 4, 2023

Manufacturer Part Number: CM200E3Y-12EPart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: ,Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Collector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODENumber of Elements: 1Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1050 nsTurn-on Time-Nom (ton): 1100 ns Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel

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