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MITSUBISHI CM50DU-24F IGBT Module

CM50DU-24F

CM50DU-24F Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,; CM50DU-24F

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 74
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CM50DU-24F Specification

Manufacturer Part Number: CM50DU-24F
Manufacturer: Mitsubishi ELECTRIC CORP
Package Description: FLANGE MOUNT, R-XUFM-X7
ECCN Code: EAR99
Case Connection: ISOLATED
Collector Current-Max (IC): 50 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 320 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

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