DH2F200N4S IGBT: Data for 400V High-Speed Switching Apps
This MagnaChip High Speed DUO PACK IGBT is engineered to minimize total power losses in high-frequency power conversion systems. At the core of its design is the principle of balancing on-state and switching performance, a critical factor for achieving high efficiency. The integration of a fast recovery diode (FRD) is pivotal, as it directly curtails the IGBT's turn-on losses by mitigating reverse recovery current spikes. This synergy between the switch and diode provides a streamlined solution for designers working on demanding inverter and converter topologies.
The MagnaChip DH2F200N4S is a high-speed Insulated Gate Bipolar Transistor (IGBT) module designed to deliver high efficiency in demanding power conversion applications. It integrates a fast-switching IGBT with a co-packaged Fast Recovery Diode (FRD), creating a solution optimized for reducing both conduction and switching losses. This device is particularly suited for systems where operational frequency and power density are key design considerations, such as in industrial motor drives and power supplies. By providing a balanced electrical performance in a standard module package, the DH2F200N4S facilitates streamlined thermal management and simplified system integration for power electronics engineers.
Operational Contexts for High-Frequency Power Conversion
The specific electrical characteristics of the DH2F200N4S enable its effective use in systems where rapid and efficient power cycling is fundamental. The module's architecture is tailored to meet the demands of modern power electronics that prioritize energy conservation and compact design.
- Industrial Motor Drives: In Variable Frequency Drives (VFDs), the module’s fast switching capabilities allow for higher PWM frequencies. This results in smoother motor operation, reduced audible noise, and smaller filter components. What is the main advantage of the DH2F200N4S's co-packaged diode? It features a fast reverse recovery, which is critical for reducing IGBT turn-on losses in the hard-switched topologies common in motor control.
- Uninterruptible Power Supplies (UPS): For online UPS systems, efficiency is paramount to reducing operational costs. The module's low VCE(sat) minimizes conduction losses during the inversion stage, contributing to a higher overall system efficiency and improved reliability.
- Welding Power Supplies: The high current handling (up to 200A at Tc=80°C) combined with fast switching makes it suitable for inverter-based welding equipment, where precise control over the power arc is necessary for quality welds.
- General Purpose Inverters: The DH2F200N4S serves as a robust switching element in various DC-AC power inverters, where the balance of losses directly impacts thermal design and the unit's physical footprint.
Best Fit Scenario: For sub-400V motor drives operating above 15kHz, the DH2F200N4S's typical 1.7mJ Eoff makes it a more energy-conserving choice than slower-switching alternatives.
Meeting Modern Efficiency Standards with Optimized IGBT Design
The design of the MagnaChip DH2F200N4S directly addresses the industry-wide imperative for greater energy efficiency and power density. As regulations like those from the U.S. Department of Energy (DOE) and the European Union's Ecodesign Directive become more stringent for electric motors and power conversion equipment, the performance of core components like IGBTs comes under greater scrutiny. This module provides engineers with a tool to meet these evolving standards. Its ability to operate at higher frequencies without incurring prohibitive switching losses allows for the design of smaller, lighter, and more efficient power systems. This trend is crucial in fields like industrial automation, where cabinet space is limited, and in renewable energy systems, where maximizing every watt of converted power is the primary goal. For an in-depth understanding of how different power semiconductors compare, see the comprehensive guide on IGBTs, MOSFETs, and BJTs.
DH2F200N4S Data Points for System Evaluation
When evaluating power modules, a direct comparison of datasheet parameters provides the necessary data for informed engineering decisions. The following presents key specifications for the DH2F200N4S, offered as a factual baseline for your analysis. For systems that operate under different voltage classes, other modules may present relevant data points for consideration. For instance, the 2MBI200VA-060 is rated for 600V, while the BSM200GB120DN2 provides a 1200V blocking capability.
Comparative Data Points for DH2F200N4S:
- Voltage Class (VCES): 400V
- Continuous Collector Current (IC at Tc=80°C): 200A
- Collector-Emitter Saturation Voltage (VCE(sat) at 200A, Tj=125°C): 2.6V (Typ.)
- Total Switching Energy (Ets at 200A, Tj=125°C): 4.2mJ (Typ.)
- Diode Forward Voltage (VF at 200A, Tj=125°C): 1.8V (Typ.)
- Diode Reverse Recovery Time (trr at 200A, Tj=125°C): 110ns (Typ.)
This data is presented to assist engineers in their component evaluation process based on the specific electrical and thermal requirements of their target application.
DH2F200N4S Electrical Characteristics at a Glance
The following parameters are extracted from the official datasheet to provide a clear overview of the module's performance under specified test conditions. For complete details and characteristic curves, please refer to the product datasheet.
Absolute Maximum Ratings (at Tc = 25°C unless otherwise specified)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCES | 400 | V |
| Gate-Emitter Voltage | VGES | ±20 | V |
| Continuous Collector Current (Tc=80°C) | IC | 200 | A |
| Pulsed Collector Current | ICM | 400 | A |
| Diode Continuous Forward Current (Tc=80°C) | IF | 200 | A |
| Maximum Power Dissipation | PC | 780 | W |
Electrical and Thermal Characteristics (at Tj = 25°C unless otherwise specified)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 200A, VGE = 15V | - | 2.1 | 2.7 | V |
| Gate-Emitter Threshold Voltage | VGE(th) | IC = 200mA, VCE = 10V | 5.0 | 6.5 | 8.0 | V |
| Turn-On Energy | Eon | IC = 200A, VCC = 300V, Tj=125°C | - | 2.5 | - | mJ |
| Turn-Off Energy | Eoff | - | 1.7 | - | mJ | |
| Diode Forward Voltage | VF | IF = 200A, VGE = 0V | - | 1.7 | 2.2 | V |
| Thermal Resistance, Junction-to-Case (IGBT) | Rth(j-c) | - | - | - | 0.16 | °C/W |
A Closer Look at the Loss-Reduction Features of the DH2F200N4S
A granular analysis of the DH2F200N4S's specifications reveals a deliberate design focus on minimizing power losses. Two key parameters are central to this: the collector-emitter saturation voltage (VCE(sat)) and the switching energy (Eon and Eoff). How does low VCE(sat) benefit a design? Lower on-state voltage drop directly translates to reduced conduction power loss, which is the dominant loss factor in low-frequency or high duty-cycle operation.
The module's typical VCE(sat) of 2.1V at its nominal current rating is a strong indicator of its efficiency during the on-state. This parameter's significance can be compared to the resistance of a pipe; a lower VCE(sat) is like a wider pipe, allowing current to flow with less energy loss converted into heat. Furthermore, the module's switching characteristics are equally important for high-frequency designs. The specified turn-on (Eon) and turn-off (Eoff) energies quantify the power lost during each switching transition. The low total switching energy (Ets) of 4.2mJ (typ) enables designers to increase the operating frequency to shrink passive components, without suffering from excessive thermal penalties. Successfully managing these loss components is a foundational aspect of reliable power system design, a topic further explored in our guide to IGBT failure analysis.
For technical inquiries or to assess the suitability of the MagnaChip DH2F200N4S for your specific application, please contact our technical support team for access to detailed documentation and design resources.
