Infineon FF150R12ME3G IGBT Module

FF150R12ME3G Description Value Package 8IHV73-3 Configuration Dual Pin Count 8 Kollektor-Emitter Sperrspannung Collector Emitter Voltage 1200 V Kollektor-Dauergleichstrom DC collector current Tc=80°C,Tvj=150°C Icnom 150A Kollektor-Dauergleichstrom DC collector current  Tc=25°C,Tvj=150°C Ic 200A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp=1 ms IcRM 300A Gesamt Verlustleistung total power dissipation Tc=25°C,Tvj=150°C Ptot 695w Gate Emitter Spitzenspannung gate emitter peak Voltage ±20 V Mounting Screw Operating Temperature -40 to 125 °C     Trans IGBT Module N-CH 1200V300A695W 8-pin