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Infineon FF650R17IE4D_B2 IGBT Module

FF650R17IE4D_B2

FF650R17IE4D_B2 Infineon IGBT-Module 1700V 650A

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$
· Date Code: 2024+
. Available Qty: 230
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FF650R17IE4D_B2 Specification

Typical Applications
●3-Level-Applications
●Auxiliary Inverters
●High Power Converters
●Motor Drives
●Traction Drives
●Wind Turbines
Electrical Features
●Extended Operation Temperature Tvj op
●High DC Stability
●High Current Density
●Low Switching Losses
●Tvjop= 150°C
●Enlarged Diode for regenerative operation
●Low VcEsat
Mechanical Features
●Package with CTI > 400
●High Creepage and Clearance Distances
●High Power and Thermal Cycling Capability
●High Power Density
●Copper Base Plate

Absolute maximum ratings (Tc=25°C unless without specified)

●Collector-Emitter voltage Vces:1700V

●Gate-Emitter voltage VGES:±20V

●Collector current Ic Continuous Tc=25°C :650A

●Collector current Icp 1ms Tc=25°C :1300A

●Collector power dissipation Pc:4150W

●Isolation Voltage VIsol (AC 1 minute) :3600V

●Operating junction temperature Tj:+150°C

●Storage temperature Tstg :-40 to +125°C

●Mounting screw torque 1.8~6.0 N·m

●Weight 825g

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