FS150R12KT3 IGBT Module features current rating of 150A and voltage rating 1200V, along with low on-state voltage drop and fast switching speed for improved efficiency and performance.
Additionally, the FS150R12KT3 designed with high short-circuit withstand capability and an integrated temperature sensor for thermal management.
The FS150R12KT3 uses solder pins for easy assembly and replacement, making it versatile and reliable choice for demanding power electronics applications such as motor drives, inverters, and welding equipment.
Product Category: IGBT Modules
Manufacturer: Infineon
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 200 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 700 W
Package / Case: Econo 3
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 17 mm
Length: 122 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 62 mm
