FZ1000R25KF1 Description
1600 A, 2500 V, N-CHANNEL IGBT
FZ1000R25KF1 4.41 lbs
Target_Applications
FZ1000R25KF1 could be used in high speed switching, low saturation voltage, voltage drive, isolated package
Features
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
VCES Collector-Emitter Voltage 2500V
VGES Gate-Emitter voltage:±20V
±lc Collector Current Tc= 25°C 1000A
±ICP Collector Current (Peak) TC= 25°C 2000A
Tj Junction Temperature -20~+100°C
Tstg Storage Temperature -40~+125°C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
Mounting screw torque 3.5 N·m
