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TOSHIBA MG300Q2YS61 IGBT Module

MG300Q2YS61

MG300Q2YS61 Toshiba Silicon N Channel IGBT 1200V 300A

· Categories: IGBT Module
· Manufacturer: TOSHIBA
· Price: US$
· Date Code: 2024+
. Available Qty: 360
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MG300Q2YS61 Specification

MG300Q2YS61 Product details
High Power Switching Applications Motor Control Applications
· High input impedance
· High speed: tf = 0.3 μs (max) Inductive load
· Low saturation voltage: VCE (sat) = 2.6 V (max)
· Enhancement-mode
· Includes a complete half bridge in one package.
· The electrodes are isolated from case.

Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:2700W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3 N·m

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