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TOSHIBA MG300Q2YS61

  • MG300Q2YS61
  • MG300Q2YS61 Toshiba Silicon N Channel IGBT 1200V 300A

    · Categories: IGBT
    · Manufacturer: TOSHIBA
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 360
    90-Day Warranty
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    Content last revised on August 28, 2026

    MG300Q2YS61 Product details
    High Power Switching Applications Motor Control Applications
    · High input impedance
    · High speed: tf = 0.3 μs (max) Inductive load
    · Low saturation voltage: VCE (sat) = 2.6 V (max)
    · Enhancement-mode
    · Includes a complete half bridge in one package.
    · The electrodes are isolated from case.

    Maximum ratings (Tc=25°C unless without specified)
    Collector-Emitter voltage Vces:1200V
    Gate-Emitter voltage VGES:±20V
    Collector current Ic Continuous Tc=25°C :300A
    Collector current Icp 1ms Tc=25°C :600A
    Collector power dissipation Pc:2700W
    Isolation Voltage VIsol (AC 1 minute) :2500V
    Operating junction temperature Tj:+150°C
    Storage temperature Tstg :-40 to +125°C
    Mounting screw torque 3 N·m

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