Toshiba MG50Q1ZS50 IGBT Module

MG50Q1ZS50 Description

GTR Module Silicon N Channel IGBT; TRANS IGBT MODULE N-CH 1200V 78A 5(2-94D7A)

MG50Q1ZS50  0.45 lbs

Target_Applications

MG50Q1ZS50 could be used in High Power Switching / Motor Control Applications

Features

. High input Impedance

. High Speed : tf=0.3ps (Max) @ Inductivc Load

. Low saturation Voltage : VCE(sat)= 3.6V (Max)

Maximum ratings(ta=25°C)

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=80°C :78A

Collector current Icp 1ms Tc=80°C :156A

Collector power dissipation Pc:400W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3/3 N·m