Content last revised on February 23, 2025
MG50Q1ZS50 Description
GTR Module Silicon N Channel IGBT; TRANS IGBT MODULE N-CH 1200V 78A 5(2-94D7A)
MG50Q1ZS50 0.45 lbs
Target_Applications
MG50Q1ZS50 could be used in High Power Switching / Motor Control Applications
Features
. High input Impedance
. High Speed : tf=0.3ps (Max) @ Inductivc Load
. Low saturation Voltage : VCE(sat)= 3.6V (Max)
Maximum ratings(ta=25°C)
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=80°C :78A
Collector current Icp 1ms Tc=80°C :156A
Collector power dissipation Pc:400W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3/3 N·m
